• DocumentCode
    1612209
  • Title

    A SiGe140-GHz low power Gm-boosted down-conversion mixer

  • Author

    Kim, Dong-Hyun ; Rieh, Jae-Sung

  • Author_Institution
    Sch. of Electr. Eng., Korea Univ., Seoul, South Korea
  • fYear
    2011
  • Firstpage
    1126
  • Lastpage
    1129
  • Abstract
    In this work, a 140 GHz down-conversion mixer has been developed based on SiGe BiCMOS technology. The mixer employs a Gm-boosting method intended for simultaneous achievement of improved conversion gain and reduced LO power requirement. Measured peak conversion gain is 7.4 dB at RF frequency of 135.6 GHz and LO power of 10 dBm at 134 GHz. The entire circuit draws 0.67 mA from a 2.2 V supply. Measured input referred P-1dB is -21 dBm.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; field effect MIMIC; low-power electronics; millimetre wave mixers; semiconductor materials; BiCMOS technology; SiGe; current 0.67 mA; frequency 134 GHz; frequency 135.6 GHz; frequency 140 GHz; gain 7.4 dB; low power Gm-boosted down-conversion mixer; voltage 2.2 V; BiCMOS integrated circuits; Conferences; Gain; Mixers; Radio frequency; Silicon germanium; Topology; Mixers; gain; millimeter wave circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference Proceedings (APMC), 2011 Asia-Pacific
  • Conference_Location
    Melbourne, VIC
  • Print_ISBN
    978-1-4577-2034-5
  • Type

    conf

  • Filename
    6173954
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1612209