• DocumentCode
    1612355
  • Title

    The leakage current study on Cu/TaSix/porous silica damascene structures

  • Author

    Chen, Chung-Hsien ; Huang, Fon-Shan

  • Author_Institution
    Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
  • fYear
    2004
  • Firstpage
    65
  • Lastpage
    68
  • Abstract
    Ta-based diffusion barriers, nano-cluster TaSi0.55, polycrystalline TaSi0.42 and TaN, were used for the application of the Cu/porous silica damascene integration. The leakage current, bias-temperature-stress measurements, atomic force microscope, and Auger electron mapping were then investigated. The samples with nano-cluster TaSi0.55 showed the best performance among these samples.
  • Keywords
    Auger electron spectroscopy; atomic force microscopy; copper; dielectric thin films; diffusion barriers; integrated circuit metallisation; leakage currents; nanostructured materials; porous materials; silicon compounds; tantalum compounds; Auger electron mapping; Cu-TaN-SiO2; Cu-TaSi-SiO2; atomic force microscope mapping; bias-temperature-stress; copper/porous silica damascene integration; diffusion barriers; leakage currents; low-dielectric-constant materials; low-k dielectrics; nanoclusters; polycrystalline structures; porous silica damascene structures; Atomic force microscopy; Atomic measurements; Current measurement; Displays; Force measurement; Leakage current; Plasma measurements; Plasma temperature; Silicon compounds; Surface cleaning;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits, 2004. IPFA 2004. Proceedings of the 11th International Symposium on the
  • Print_ISBN
    0-7803-8454-7
  • Type

    conf

  • DOI
    10.1109/IPFA.2004.1345543
  • Filename
    1345543
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1612355