DocumentCode
1614637
Title
A 5b 800MS/s 2mW asynchronous binary-search ADC in 65nm CMOS
Author
Ying-Zu Lin ; Soon-Jyh Chang ; Yen-Ting Liu ; Chun-Cheng Liu ; Guang-Ying Huang
Author_Institution
Nat. Cheng-Kung Univ., Tainan, Taiwan
fYear
2009
Firstpage
80
Abstract
This paper reports a 5b asynchronous binary-search ADC with reference-range prediction. The maximum conversion speed of this ADC is 800 MS/s at a cost of 2 mW power consumption. The ADC is fabricated in a 1P6M 65 nm CMOS process with metal-oxide-metal (MOM) capacitors.
Keywords
CMOS digital integrated circuits; analogue-digital conversion; CMOS process; asynchronous binary-search ADC; metal-oxide-metal capacitors; power 2 mW; reference-range prediction; size 65 nm; word length 5 bit; CMOS logic circuits; Clocks; Electrical resistance measurement; Energy consumption; Flip-flops; Logic circuits; Multiplexing; Sampling methods; Switching converters; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference - Digest of Technical Papers, 2009. ISSCC 2009. IEEE International
Conference_Location
San Francisco, CA
Print_ISBN
978-1-4244-3458-9
Type
conf
DOI
10.1109/ISSCC.2009.4977317
Filename
4977317
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