300mm copper low-k integration and reliability for 90 and 65 nm nodes

Author

Parikh, Suketu ; Naik, Mehul ; Hung, Raymond ; Dai, Huixiong ; Padhi, Deenesh ; Zhang, Luke ; Pan, Tony ; Liu, Kuo-Wei ; Dixit, Girish ; Armacost, Michael

Author_Institution

Appl. Mater. Inc., Santa Clara, CA, USA

fYear

2004

Firstpage

60

Lastpage

62

Abstract

The paper addresses critical issues associated with 90 and 65 nm copper low k interconnects. A stable baseline with >98% yield on 1E7via and 5m long serpent was established. Electromigration (EM) and IV breakdown performance was improved by optimizing the post CMP Cu pre-treatment and the dielectric barrier obtaining EM T_0.1 lifetime of greater than 10 yrs at 1.5 MA/cm² and >6MV/cm IV breakdown field. Detailed characterization of the impact of the barrier process on stress migration (SM) is presented. Extendibility of the process flow to sub-90nm interconnects and advanced dielectric (k<2.7) is shown.

Keywords

electromigration; integrated circuit interconnections; process design; 10 yrs; 300 mm; 5 m; 65 nm; 90 nm; Cu; EM lifetime; IV breakdown performance; advanced dielectric; copper low k interconnects; dielectric barrier; electromigration performance; post CMP Cu pre-treatment; process flow; stable baseline; stress migration; sub-90nm interconnects; Coatings; Copper; Dielectric breakdown; Etching; Performance analysis; Resists; Samarium; Stress; Testing; Toxicology;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2004. Proceedings of the IEEE 2004 International

Print_ISBN

0-7803-8308-7

Type

conf

DOI

10.1109/IITC.2004.1345684

Filename

1345684