DocumentCode
1615732
Title
Epitaxial and layout optimization of SiC microwave power varactors
Author
Andersson, Christer M. ; Magnusson, Björn ; Henelius, Niklas ; Rorsman, Niklas
Author_Institution
Microwave Electron. Lab., Chalmers Univ. of Technol., Göteborg, Sweden
fYear
2011
Firstpage
1642
Lastpage
1645
Abstract
SiC Schottky diode varactors have been designed for use in tunable microwave power circuits. Epitaxial growth results show excellent material uniformity with low access layer sheet resistances. Two types of device layouts have been evaluated. Island type layouts reduce the parasitic series resistance by 50-60% compared to typical finger layouts. The Q-factors of downscaled island devices are approaching the intrinsic material performance, but are limited by an increasing parasitic parallel capacitance.
Keywords
Q-factor; Schottky diodes; epitaxial growth; microwave devices; silicon compounds; varactors; wide band gap semiconductors; Q-factors; Schottky diode varactors; SiC; epitaxial growth; finger layouts; layout optimization; low access layer sheet resistances; microwave power varactors; tunable microwave power circuits; Layout; Microwave theory and techniques; Ohmic contacts; Resistance; Silicon carbide; Tuning; Varactors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference Proceedings (APMC), 2011 Asia-Pacific
Conference_Location
Melbourne, VIC
Print_ISBN
978-1-4577-2034-5
Type
conf
Filename
6174082
Link To Document