DocumentCode
1615860
Title
Conformal doping of 3-D structures using sub-atmospheric CVD films
Author
Mandrekar, T. ; Hernandez, M. ; Hua, J. ; Ton, V. ; Bhatnagar, A. ; Mehta, S. ; Venkataraman, S.
Author_Institution
Appl. Mater., Santa Clara, CA, USA
fYear
2010
Firstpage
251
Lastpage
255
Abstract
Applicability of SACVD for doping of 3-D structures was assessed on both flat substrates as well as patterned structures focusing on the optimization of dopant profile within the SACVD film. Boron and phosphorous doped ultra-shallow junctions of 6 and 10 nm respectively are obtained with surface concentration in excess of 1E21 at/cc for this intrinsically conformal and damage-free technique.
Keywords
amorphous semiconductors; boron; chemical vapour deposition; doping profiles; elemental semiconductors; phosphorus; semiconductor doping; semiconductor thin films; silicon; 3D structures; Si:B; Si:P; boron doped ultra-shallow junction; conformal doping; damage-free technique; dopant profile optimization; flat substrates; patterned structures; phosphorous doped ultra-shallow junction; sub-atmospheric CVD film; surface concentration; Annealing; Doping; Films; Junctions; Process control; Silicon; Surface treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference (ASMC), 2010 IEEE/SEMI
Conference_Location
San Francisco, CA
ISSN
1078-8743
Print_ISBN
978-1-4244-6517-0
Type
conf
DOI
10.1109/ASMC.2010.5551463
Filename
5551463
Link To Document