An integrated low-pass filter structure

Author

Holten, Stephan ; Kliem, Herbert

Author_Institution

Inst. of Electr. Eng. Phys., Saarland Univ., Saarbrucken, Germany

fYear

2001

fDate

6/23/1905 12:00:00 AM

Firstpage

215

Lastpage

218

Abstract

Presented a novel method to prepare integrated low-pass MIS filters by evaporating a palladium gate electrode structure on a Si-SiO ₂ substrate layer. The filter properties are achieved by structuring the gate electrode with areas of low-resistance contact pads and a high-resistance region. The high-resistance region with its clustered structure exhibits an anomalous temperature dependence for a metal. The resistivity follows an Arrhenius like thermally activated process. Gold electrode structures of the same geometrical dimensions show no measurable conductivity

Keywords

MIS devices; MOS analogue integrated circuits; low-pass filters; palladium; silicon; silicon compounds; Arrhenius like thermally activated process; Si-SiO₂-Pd; anomalous temperature dependence; clustered structure; gate electrode structure; geometrical dimensions; high-resistance region; low-pass filter structure; low-resistance contact pads; resistivity; Conductivity; Cutoff frequency; Electric resistance; Electrical resistance measurement; Electrodes; Fabrication; Low pass filters; Morphology; Palladium; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid Dielectrics, 2001. ICSD '01. Proceedings of the 2001 IEEE 7th International Conference on

Conference_Location

Eindhoven

Print_ISBN

0-7803-6352-3

Type

conf

DOI

10.1109/ICSD.2001.955597

Filename

955597