Experimental demonstration of the MOS controlled diode (MCD)

Author

Xu, Zhenxue ; Zhang, Bo ; Huang, Alex Q.

Author_Institution

Center for Power Electron. Syst., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA

Volume

2

fYear

2000

fDate

6/22/1905 12:00:00 AM

Firstpage

1144

Abstract

The MOS controlled diode (MCD) is a new class of power semiconductor diode that can achieve ideal diode performance. In this paper, experimental verification of the MCD concept is presented for the first time by using commercially available power MOSFETs operating as MCDs. Measurements of the reverse recovery currents and reverse recovery charges of these MCDs are obtained and compared with the body diodes of the MOSFETs. These measurements show that these MCDs can significantly reduce the reverse recovery current, storage charge and switching loss. Optimized MCD performances at 1.2 kV, 2.4 kV and 4.5 kV are also projected based on numerical simulations. Ideal performance of the MCD close to that predicted by device simulation should be obtained once an optimized MCD is developed

Keywords

charge measurement; electric current measurement; numerical analysis; power MOSFET; power semiconductor diodes; semiconductor device measurement; semiconductor device models; semiconductor device testing; 1.2 kV; 2.4 kV; 4.5 kV; MCD concept; MOS controlled diode; experimental demonstration; ideal diode performance; numerical simulation; power MOSFETs; power semiconductor diode; reverse recovery charge measurements; reverse recovery current measurements; storage charge; switching loss; Anodes; Control systems; Current measurement; Leakage current; MOSFETs; Schottky diodes; Semiconductor diodes; Switches; Switching loss; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition, 2000. APEC 2000. Fifteenth Annual IEEE

Conference_Location

New Orleans, LA

Print_ISBN

0-7803-5864-3

Type

conf

DOI

10.1109/APEC.2000.822831

Filename

822831