High speed Si-based optical modulator for on-chip optical interconnects

Author

Marris, D. ; LUPU, ANATOLE ; Pascal, Daniel ; Cercus, Jean-Luc ; Vivien, Laurent ; Cassan, Eric ; Laval, Suzanne

Author_Institution

Inst. d´´Electronique Fondamentale, Univ. Paris Sud, France

fYear

2004

Firstpage

122

Lastpage

124

Abstract

A modulation-doped SiGe-Si multiple quantum well modulator (MD-MQW) embedded in a reverse biased PIN junction is described. Experimental and theoretical results show that the optical index variation can be achieved by plasma-dispersion effect associated to carrier depletion. Interferometric integrated structures proper to transform the obtained phase modulation into amplitude modulation are presented, and the main properties of the optical modulator are evaluated, including intrinsic rapidity, contrast ratio and insertion losses.

Keywords

amplitude modulation; elemental semiconductors; optical interconnections; optical modulation; p-i-n diodes; phase modulation; silicon compounds; MD-MQW; Si-based optical modulator; SiGe:Si; amplitude modulation; carrier depletion; contrast ratio; doped SiGe-Si; high speed optical modulator; insertion losses; interferometric integrated structures; intrinsic rapidity; modulation doping; multiple quantum well modulator; on-chip optical interconnects; optical index variation; phase modulation; plasma-dispersion effect; reverse biased PIN junction; Amplitude modulation; Epitaxial layers; High speed optical techniques; Integrated optics; Optical interconnections; Optical interferometry; Optical losses; Optical modulation; Phase modulation; Plasma properties;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2004. Proceedings of the IEEE 2004 International

Print_ISBN

0-7803-8308-7

Type

conf

DOI

10.1109/IITC.2004.1345712

Filename

1345712