Influence of technological and geometrical parameters on low-frequency noise in SOI omega-gate nanowire NMOSFETs

Author

Koyama, Masanori ; Casse, M. ; Coquand, R. ; Barraud, S. ; Ghibaudo, Gerard ; Iwai, Hisato ; Reimbold, Gilles

Author_Institution

CEA LETI, Grenoble, France

fYear

2014

fDate

28-30 April 2014

Firstpage

1

Lastpage

2

Abstract

A study of the interface quality in ultra-scaled omega-gate nanowire NMOSFETs, with variant technological boosters, is presented by low-frequency noise (LFN) measurements. Excellent quality of the interfaces has been achieved down to narrow width (10nm), and whatever the technological splits. In particular, efficient tensile stressor has been demonstrated with high performance enhancement and preserved noise performance fulfilling the ITRS 1/f LFN road map.

Keywords

1/f noise; MOSFET; nanoelectronics; nanowires; semiconductor device noise; silicon-on-insulator; ITRS 1/f LFN road map; LFN measurements; SOI omega-gate nanowire NMOSFETs; efficient tensile stressor; geometrical parameters; high performance enhancement; interface quality; low-frequency noise; preserved noise performance; size 10 nm; technological parameters; technological splits; ultra-scaled omega-gate nanowire NMOSFETs; variant technological boosters; Annealing; Logic gates; MOSFET; Noise; Silicon; Strain;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Application (VLSI-TSA), Proceedings of Technical Program - 2014 International Symposium on

Conference_Location

Hsinchu

Type

conf

DOI

10.1109/VLSI-TSA.2014.6839653

Filename

6839653