• DocumentCode
    161653
  • Title

    Body-bias effect in SOI FinFET for low-power applications: Gate length dependence

  • Author

    Sachid, Angada B. ; Khandelwal, Sourabh ; Chenming Hu

  • Author_Institution
    Electr. Eng. & Comput. Sci., Univ. of California Berkeley, Berkeley, CA, USA
  • fYear
    2014
  • fDate
    28-30 April 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We study the gate length dependence of body-bias effect in SOI FinFETs. Using measurements and simulations we show that body-bias effect is enhanced as the gate length is decreased. We study the impact of channel doping and device geometry on body-bias effect.
  • Keywords
    MOSFET; low-power electronics; semiconductor device measurement; semiconductor doping; silicon-on-insulator; SOI FinFET; body-bias effect; channel doping; device geometry; gate length dependence; low-power electronics; Couplings; Doping; Electric fields; FinFETs; Logic gates; Substrates; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems and Application (VLSI-TSA), Proceedings of Technical Program - 2014 International Symposium on
  • Conference_Location
    Hsinchu
  • Type

    conf

  • DOI
    10.1109/VLSI-TSA.2014.6839655
  • Filename
    6839655
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=161653