Monolithic graphene frequency multiplier working at 10GHz range

Author

Hongming, L.V. ; Huaqiang Wu ; Jinbiao Liu ; Jiebin Niu ; Yu Jiahan ; Can Huang ; Junfeng Li ; Qiuxia Xu ; Xiaoming Wu ; He Qian

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

fYear

2014

fDate

28-30 April 2014

Firstpage

1

Lastpage

2

Abstract

A high-performance monolithically integrated graphene frequency multiplier working at 10 GHz range is demonstrated with novel implementation method. A CMOS compatible two-layer-routing process is proposed to fabricate passive elements, interconnects and buried gate/source/drain regions on 8" wafers. This is followed by large-scale monolayer graphene transfer to form graphene ICs. The frequency multiplier circuit features a 3dB bandwidth of record high 4GHz. The conversion gain reaches -26dB.

Keywords

CMOS integrated circuits; MMIC frequency convertors; field effect MMIC; frequency multipliers; graphene; CMOS compatible two-layer-routing process; buried gate-source-drain regions; frequency 10 GHz; graphene ICs; high-performance monolithically integrated graphene frequency multiplier; large-scale monolayer graphene transfer; passive elements; Bandwidth; Frequency measurement; Graphene; Integrated circuit interconnections; Logic gates; Loss measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Application (VLSI-TSA), Proceedings of Technical Program - 2014 International Symposium on

Conference_Location

Hsinchu

Type

conf

DOI

10.1109/VLSI-TSA.2014.6839669

Filename

6839669