High mobility transparent Al-Sn-Zn-O thin film transistors fabricated at low temperature

Author

Yingying Cong ; Dedong Han ; Dongfang Shan ; Yu Tian ; Fuqing Huang ; Suoming Zhang ; Zhuofa Chen ; Jing Wu ; Nannan Zhao ; Feilong Zhao ; Juncheng Dong ; Shengdong Zhang ; Xing Zhang ; Yi Wang

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

fYear

2014

fDate

28-30 April 2014

Firstpage

1

Lastpage

2

Abstract

Fully-transparent inverted-staggered Aluminum and Tin co-doped ZnO (ATZO) thin film transistors (TFTs) have been fabricated by RF magnetron sputtering on glass substrate at low temperature. The characteristics of ATZO TFTs fabricated at various partial pressures of oxygen are studied. The ATZO TFTs demonstrate excellent performance, including a high field effect mobility of 145.33 cm²/Vs, a threshold voltage of 1.71 V, a subthreshold swing of 0.22 V/dec and an on-to-off current ratio of 7.5×10⁷.

Keywords

aluminium compounds; sputtering; thin film transistors; tin compounds; zinc compounds; ATZO; Al-Sn-Zn-O; RF magnetron sputtering; TFTs; field effect mobility; fully-transparent inverted-staggered aluminum-tin co-doped ZnO thin film transistors; glass substrate; high mobility transparent thin film transistors; low temperature; voltage 1.71 V; Films; Glass; Indium tin oxide; Radio frequency; Sputtering; Thin film transistors; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Application (VLSI-TSA), Proceedings of Technical Program - 2014 International Symposium on

Conference_Location

Hsinchu

Type

conf

DOI

10.1109/VLSI-TSA.2014.6839671

Filename

6839671