Design of a high-performance brokaw band-gap reference

Author

Hu, Jun ; Yin, Yongsheng ; Deng, Honghui

Author_Institution

Inst. of VLSI Design, Hefei Univ. of Technol. Hefei, Hefei, China

fYear

2010

Firstpage

126

Lastpage

129

Abstract

A high-performance CMOS band-gap reference (BGR) is designed in this paper. The proposed circuit employs the current-mode architecture optimized for low supply voltage applications. The key portion of the circuit employs the Brokaw BGR architecture, in which a three-stage operational amplifier is adopted to get high PSRR and only first-order temperature compensation technology is employed to get a low temperature coefficient. The circuit is on the Chartered 0.18 μ m CMOS process under the operating voltage of 1.8V and its simulation results are presented. The simulation results show that the temperature coefficient is 9 ppm/°K over the -40°C to 125°C temperature range and the fluctuation of reference voltage is within 0.067 m V when the power voltage changes from 1.44 V to 2.16 V. In addition, the PSRR is 108.5 dB at 10 kHz, and the power consumption is only 0.355 mW.

Keywords

CMOS integrated circuits; current-mode circuits; low-power electronics; operational amplifiers; CMOS band-gap reference; current-mode architecture; frequency 10 kHz; high-performance Brokaw band-gap reference; low supply voltage applications; operational amplifier; power 0.355 mW; power consumption; size 0.18 mum; temperature -40 degC to 125 degC; voltage 1.8 V; Bipolar transistors; Fluctuations; Photonic band gap; Power demand; Resistors; Simulation; Temperature; BGR; Current-mode; PSRR; Power consumption; Temperature coefficient;

fLanguage

English

Publisher

ieee

Conference_Titel

Anti-Counterfeiting Security and Identification in Communication (ASID), 2010 International Conference on

Conference_Location

Chengdu

Print_ISBN

978-1-4244-6731-0

Type

conf

DOI

10.1109/ICASID.2010.5551518

Filename

5551518