GaAs foundry technologies

Author

Yu-Chi Wang

Author_Institution

WIN Semicond., Kuei Shan Hsiang, Taiwan

fYear

2014

fDate

28-30 April 2014

Firstpage

1

Lastpage

2

Abstract

GaAs wafer foundry has become an integral part of the RF/microwave semiconductor supply chain. A credible GaAs foundry has to establish its internal capability on developing cutting-edge technologies to meet the fast increasing product performance requirements in both mobile and infrastructure markets. Flip-chip bumping process, BiHEMT, mmW pHEMT, and high power GaN HEMT are clearly the critical technologies taking the microwave/mmW products toward higher performance, greater bandwidth, and higher power with smaller form factors.

Keywords

III-V semiconductors; flip-chip devices; foundries; gallium arsenide; high electron mobility transistors; microwave field effect transistors; microwave integrated circuits; millimetre wave field effect transistors; millimetre wave integrated circuits; supply chain management; BiHEMT; GaAs; RF-microwave semiconductor supply chain; cutting-edge technology; flip-chip bumping process; high power GaN HEMT; infrastructure markets; mmW pHEMT; mobile markets; wafer foundry technology; Foundries; Gallium arsenide; Heterojunction bipolar transistors; Microwave technology; PHEMTs; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Application (VLSI-TSA), Proceedings of Technical Program - 2014 International Symposium on

Conference_Location

Hsinchu

Type

conf

DOI

10.1109/VLSI-TSA.2014.6839698

Filename

6839698