Design of multi-octave band GaN-HEMT power amplifier

Author

Eren, G. ; Sen, Ozlem A. ; Bolukbas, B. ; Kurt, Gokhan ; Arican, O. ; Cengiz, Omer ; Unal, S.T.K. ; Durmus, Yunus ; Ozbay, Ekmel

Author_Institution

Dept. of Electr. & Electron. Eng., Bilkent Univ., Ankara, Turkey

fYear

2012

Firstpage

1

Lastpage

3

Abstract

This paper describes design, fabrication and measurement of 6 GHz - 18 GHz monolithic microwave integrated circuit (MMIC) amplifier. The amplifier is realized as coplanar waveguide (CPW) circuit using 0.3 μm-gate Gallium-Nitride (GaN) HEMT technology. The amplifier has a small signal gain of 7 ± 0.75 dB. The output power at 3dB compression is better than 24 dBm with 16%-19% drain efficiency for the whole 6 GHz-18 GHz frequency band under continuous wave (CW) power.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC; gallium compounds; microwave amplifiers; power amplifiers; wide band gap semiconductors; CPW circuit; MMIC amplifier; continuous wave CW) power; coplanar waveguide circuit; frequency 6 GHz to 18 GHz; gallium-nitride HEMT technology; monolithic microwave integrated circuit amplifier; multioctave band GaN-HEMT power amplifier design; size 0.3 mum; Fabrication; Gallium nitride; HEMTs; Indexes; Instruments; MODFETs; Silicon compounds; GaN HEMT; amplifier; gain equalization networks; multi-octave bandwidth; wide-band matching networks;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on

Conference_Location

Bangkok

Print_ISBN

978-1-4673-5694-7

Type

conf

DOI

10.1109/EDSSC.2012.6482767

Filename

6482767