Design of wideband CMOS LNA with active inductor and using noise-canceling technique

Author

Gao, Mingkun ; Wang, Yi ; Wang, Yunfeng ; Guo, Donghui

Author_Institution

Dept. of Phys., Xiamen Univ., Xiamen, China

fYear

2009

Firstpage

262

Lastpage

265

Abstract

A wideband CMOS low-noise amplifier (LNA) is presented in this paper. The LNA exploits a combination of a common-gate stage and a common-source stage to cancel the noise from the input matching device. An active inductor is used to extend the bandwidth and minimize the chip area. It is designed with 0.18 mum CMOS process in an active area of 0.04 mm². Post simulation shows that the LNA has a maximum power gain of 14 dB and noise-figure less than 4 dB from 375 MHz to 2.18 GHz while drawing 8.1 mA from 1.8 V supply voltage including output buffer.

Keywords

CMOS integrated circuits; inductors; low noise amplifiers; active inductor; common-gate stage; common-source stage; current 8.1 mA; frequency 375 MHz to 2.18 GHz; input matching device; low-noise amplifier; noise-canceling technique; size 0.18 mum; voltage 1.8 V; wideband CMOS LNA design; Active inductors; Active noise reduction; Bandwidth; CMOS process; CMOS technology; Gain; Impedance matching; Low-noise amplifiers; Noise cancellation; Wideband; Active Inductor; Noise-Canceling; Wideband LNA;

fLanguage

English

Publisher

ieee

Conference_Titel

Anti-counterfeiting, Security, and Identification in Communication, 2009. ASID 2009. 3rd International Conference on

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-3883-9

Electronic_ISBN

978-1-4244-3884-6

Type

conf

DOI

10.1109/ICASID.2009.5276909

Filename

5276909