Modeling hot-carrier-induced reliability of poly-silicon thin film transistors

Author

Wang, Lisa Ling ; Kuo, J.B. ; Shengdong Zhang

Author_Institution

Sch. of Comput. & Inf. Eng., Peking Univ., Shenzhen, China

fYear

2012

Firstpage

1

Lastpage

2

Abstract

This paper reports modeling the hot-carrier-induced reliability of poly-silicon thin film transistors (poly-Si TFT). In the damage region near the drain of the poly-Si TFT, using the tail-state-density-dependent mobility model as for the amorphous silicon TFT model, the tail state density model of the test device after stress, as a function of the stress time has been built; which is the key in modeling the reliability of poly-Si TFT biased at high V_D and a low V_G, as verified by experimental data.

Keywords

amorphous semiconductors; elemental semiconductors; hot carriers; semiconductor device models; semiconductor device reliability; silicon; thin film transistors; Si; amorphous silicon TFT model; hot-carrier-induced reliability modelling; poly-silicon thin film transistors; tail-state-density-dependent mobility model; test device; Amorphous silicon; Data models; Electric fields; Hot carriers; Reliability; Stress; Thin film transistors; Poly-Si TFTs; hot carriers; reliability; tail state;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on

Conference_Location

Bangkok

Print_ISBN

978-1-4673-5694-7

Type

conf

DOI

10.1109/EDSSC.2012.6482798

Filename

6482798