Analysis of process-induced charges created in MOSFETs and related collection test structures

Author

Dars, P. ; Basset, R. ; Merckel, G.

Author_Institution

CNET-CNS, Meylan, France

fYear

1990

Firstpage

51

Lastpage

55

Abstract

The use of gate isolated test transistors can lead to the creation of process-induced charges which cannot occur on transistors implemented on circuits. A test structure has been designed to separate the intrinsic process related defects which can result in yield losses on circuits, and the charges or states created in the devices usually used in test patterns. With the use of this collection test structure (CTS), the influence of the different process steps in terms of creation of charges can be identified; in particular, the role of the last steps can be pointed out

Keywords

insulated gate field effect transistors; semiconductor device testing; MOSFETs; collection test structures; gate isolated test transistors; intrinsic process; process-induced charges; test patterns; yield losses; Battery charge measurement; Charge measurement; Charge pumps; Circuit testing; Conducting materials; Current measurement; Data mining; Integrated circuit interconnections; MOSFETs; Plugs;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1991. ICMTS 1991. Proceedings of the 1991 International Conference on

Conference_Location

Kyoto

Print_ISBN

0-87942-588-1

Type

conf

DOI

10.1109/ICMTS.1990.161712

Filename

161712