• DocumentCode
    1619383
  • Title

    20GHz on-chip measurement of ESD waveform for system level analysis

  • Author

    Caignet, Fabrice ; Nolhier, Nicolas ; Wang, Aiping ; Mauran, Nicolas

  • Author_Institution
    LAAS, Toulouse, France
  • fYear
    2013
  • Firstpage
    1
  • Lastpage
    9
  • Abstract
    This paper deals with on-chip oscilloscope developed for in-situ measurement of real ESD event in 65nm CMOS technology. The measurement bandwidth of the embedded sampler is 100GHz, and 20GHz for the probes. Some measurement results during an ESD stress on an I/O structure are presented.
  • Keywords
    CMOS integrated circuits; electrostatic discharge; oscilloscopes; probes; semiconductor device measurement; stress effects; CMOS technology; ESD event; ESD stress; ESD waveform; I/O structure; frequency 100 GHz; frequency 20 GHz; measurement bandwidth; on-chip measurement; on-chip oscilloscope; probes; size 65 nm; system level analysis; Capacitance; Electrostatic discharges; Probes; Semiconductor device measurement; Stress; System-on-chip; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2013 35th
  • Conference_Location
    Las Vegas, NV
  • ISSN
    0739-5159
  • Type

    conf

  • Filename
    6635920
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1619383