Efficient models for non-quasi-static effects and correlated noise in SiGe HBTs

Author

Augustine, Nishanth ; Kumar, Kush ; Chakravorty, Anjan ; Bhattacharyya, A. ; Zimmer, T.

Author_Institution

Dept. of Electr. Eng., Indian Inst. of Technol. Madras, Chennai, India

fYear

2012

Firstpage

1

Lastpage

4

Abstract

The capability of a single CR sub-circuit to model a wide range of non-quasi-static (NQS) delays in silicon germanium heterojunction bipolar transistors is explored. A comparative study is carried out to show that the suitable use of a single CR sub-circuit following the partitioned-charge-based approach can replace the popularly used CR-LCR combination to model both the input and output NQS effects. Based on this NQS model, a correlated noise model is developed, which requires only three additional nodes for implementation in Verilog-A. Results show excellent agreement with numerically simulated data.

Keywords

Ge-Si alloys; delays; heterojunction bipolar transistors; numerical analysis; semiconductor device models; semiconductor device noise; CR-LCR combination; HBT; NQS delay; SiGe; Verilog-A implementation; correlated noise model; heterojunction bipolar transistor; input NQS effect; nonquasistatic delay; numerical simulation; output NQS effect; partitioned-charge-based approach; single CR subcircuit model; Accuracy; Data models; Delays; Integrated circuit modeling; Noise; Numerical models; Silicon germanium; CR sub-circuit; LCR network; NQS effects; SiGe HBT; correlated noise; minority charge partitioning;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on

Conference_Location

Bangkok

Print_ISBN

978-1-4673-5694-7

Type

conf

DOI

10.1109/EDSSC.2012.6482848

Filename

6482848