A 6 kV/5 kA reverse conducting GCT

Author

Yamaguchi, Y. ; Oota, K. ; Kurachi, K. ; Tokunoh, F. ; Yamaguchi, H. ; Iwamoto, H. ; Donlon, J. ; Motto, E.

Author_Institution

Fukuryo Semicon Eng. Corp., Fukuoka, Japan

Volume

3

fYear

2001

Firstpage

1497

Abstract

A reverse conducting gate commutated thyristor (RCGCT) rated at 6000 volts and 5000 amperes has been developed. Low loss, snubberless turn off, and high reliability have been achieved using the same advanced technology that produced the 6000 volt, 6000 ampere asymmetric GCT. That is, the GCT part is realized using MEPLT (multi energy proton lifetime control technology). Now a monolithic low loss free wheel diode is included on the same wafer. Integration of the free wheel diode with the GCT on the same wafer in the same package allows considerable reduction in size, weight, and assembly complexity. This new device will contribute to further miniaturization and improved performance and reliability of high power electronic systems.

Keywords

commutation; power semiconductor switches; semiconductor device reliability; thyristors; 5 kA; 6 kV; RCGCT; losses; miniaturization; monolithic low loss free wheel diode; multi energy proton lifetime control technology; performance; power electronic systems; reliability; reverse conducting gate commutated thyristor; snubberless turn-off; Circuits; Diodes; Packaging; Power system reliability; Protons; Reliability engineering; Space heating; Space technology; Thyristors; Wheels;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 2001. Thirty-Sixth IAS Annual Meeting. Conference Record of the 2001 IEEE

Conference_Location

Chicago, IL, USA

ISSN

0197-2618

Print_ISBN

0-7803-7114-3

Type

conf

DOI

10.1109/IAS.2001.955733

Filename

955733