• DocumentCode
    1620043
  • Title

    Nanoelectronics and Diversification in the 3D technologies era

  • Author

    Deleonibus, Simon

  • Author_Institution
    LETI, CEA, Grenoble, France
  • fYear
    2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Nanoelectronics will have to face major challenges in the next decades in order to proceed with increasing progress and reduced variability. New progress laws combined to the scaling down of CMOS based technology will emerge to enable new paths to Functional Diversification. New materials and disruptive architectures, Heterogeneous Integration, introducing 3D schemes at the Front End and Back End levels, will be introduced to make it possible.
  • Keywords
    CMOS integrated circuits; nanoelectronics; 3D schemes; 3D technology; CMOS based technology; back end level; disruptive architectures; diversification; front end level; functional diversification; heterogeneous integration; nanoelectronics; variability reduction; Abstracts; Logic gates; MOS devices; Random access memory; 3D; FDSOI; FinFET; Nanoelectronics; diversifications; embedded memories;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on
  • Conference_Location
    Bangkok
  • Print_ISBN
    978-1-4673-5694-7
  • Type

    conf

  • DOI
    10.1109/EDSSC.2012.6482878
  • Filename
    6482878