DocumentCode
1620043
Title
Nanoelectronics and Diversification in the 3D technologies era
Author
Deleonibus, Simon
Author_Institution
LETI, CEA, Grenoble, France
fYear
2012
Firstpage
1
Lastpage
4
Abstract
Nanoelectronics will have to face major challenges in the next decades in order to proceed with increasing progress and reduced variability. New progress laws combined to the scaling down of CMOS based technology will emerge to enable new paths to Functional Diversification. New materials and disruptive architectures, Heterogeneous Integration, introducing 3D schemes at the Front End and Back End levels, will be introduced to make it possible.
Keywords
CMOS integrated circuits; nanoelectronics; 3D schemes; 3D technology; CMOS based technology; back end level; disruptive architectures; diversification; front end level; functional diversification; heterogeneous integration; nanoelectronics; variability reduction; Abstracts; Logic gates; MOS devices; Random access memory; 3D; FDSOI; FinFET; Nanoelectronics; diversifications; embedded memories;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on
Conference_Location
Bangkok
Print_ISBN
978-1-4673-5694-7
Type
conf
DOI
10.1109/EDSSC.2012.6482878
Filename
6482878
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