• DocumentCode
    1620097
  • Title

    Single crystal silicon contacted double self-aligned bipolar junction transistor by selective epitaxial growth

  • Author

    Subramanian, Chitra K. ; Neudeck, Gerold W.

  • Author_Institution
    Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA
  • fYear
    1994
  • Firstpage
    68
  • Lastpage
    71
  • Abstract
    A novel single crystal silicon contacted double self-aligned transistor (DST) structure, that uses vertical seed epitaxial lateral overgrowth (VELO) is demonstrated. When scaled to smaller dimensions, this structure can provide an 18% improvement in ECL circuit speed
  • Keywords
    bipolar transistors; CVD epitaxial growth; ECL circuit speed; Si; double self-aligned bipolar junction transistor; selective epitaxial growth; vertical seed epitaxial lateral overgrowth; Circuits; Contacts; Crystallization; Epitaxial growth; Fabrication; Laboratories; Parasitic capacitance; Research and development; Silicon; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting,1994., Proceedings of the 1994
  • Conference_Location
    Minneapolis, MN
  • Print_ISBN
    0-7803-1316-X
  • Type

    conf

  • DOI
    10.1109/BIPOL.1994.587861
  • Filename
    587861
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1620097