Influence of interface trap states and quantum mechanical effects on the drain current of In0.53Ga0.47As MOSFETs

Effects of interface trap states (D_it) and quantum mechanical (QM) correction on the I-V characteristic of In_0.53Ga_0.47As surface channel enhancement-mode MOSFETs are investigated. A surface potential based compact model is used for the study. D_it affects the drain current by (i) stretching the gate voltage and (ii) lowering the carrier mobility. Stretching of the gate voltage is the dominant mechanism for the degradation of the subthreshold slope (SS) while reduction of the carrier mobility is the dominant mechanism for the degradation of the saturation drain current. QM effect also causes a lowering of the saturation drain current with negligible effect on SS.