• DocumentCode
    1620763
  • Title

    High Q inductors for wireless applications in a complementary silicon bipolar process

  • Author

    Ashby, K.B. ; Finley, W.C. ; Bastek, J.J. ; Moinian, S. ; Koullias, I.A.

  • Author_Institution
    AT&T Microelectron., AT&T Bell Labs., Reading, PA, USA
  • fYear
    1994
  • Firstpage
    179
  • Lastpage
    182
  • Abstract
    Rectangular spiral inductors with Q´s as high as 12 have been built in a high-speed complementary bipolar process and characterized for use in wireless applications. An accurate broadband model has been developed for the inductors, and a test filter and mixer have been built to verify the performance of the inductors and the accuracy of the model
  • Keywords
    Q-factor; Q factor; RF filter; Si; broadband model; complementary bipolar IC process; mixers; rectangular spiral inductors; wireless applications; Aluminum; Electrical resistance measurement; Inductance; Inductors; Integrated circuit technology; Metallization; Q measurement; Silicon; Spirals; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting,1994., Proceedings of the 1994
  • Conference_Location
    Minneapolis, MN
  • Print_ISBN
    0-7803-1316-X
  • Type

    conf

  • DOI
    10.1109/BIPOL.1994.587889
  • Filename
    587889
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1620763