A single-poly BiCMOS technology with 30 GHz bipolar fT

We present process design and device performance of bipolar transistors embedded in a single-poly BiCMOS technology. The bipolar device possesses a CMOS-like morphology and is easily integrated into a CMOS-based process flow with two additional masks. The integrated process yields a structure with minimum topography. Process concerns associated with the conventional double-poly structure are therefore avoided. Shallow emitter and base junction depth are achieved through a conventional ion implantation approach with proper control of the thermal budget. Bipolar transistors featuring 31 GHz bipolar f_T and 4 V BV_ceo are achieved. The technology thus developed has the highest f_T in the category of single-polysilicon BiCMOS process ever reported