Temperature effects on trench-gate IGBTs

Author

Santi, E. ; Caiafa, A. ; Kang, X. ; Hudgins, J.L. ; Palmer, P.R. ; Goodwine, D. ; Monti, A.

Author_Institution

Dept. of Electr. Eng., South Carolina Univ., Columbia, SC, USA

Volume

3

fYear

2001

Firstpage

1931

Abstract

The switching characteristics (turn-on and turn-off) and forward conduction drop of trench-gate IGBTs are examined over a temperature range of -150 to 150/spl deg/C. An analytical description of the forward conduction voltage drop is presented based on temperature dependencies of the appropriate physical parameters and mechanisms. A physics-based PSpice model, incorporating much of the device behavior, is also described. Results from the model are compared to experimental waveforms and discrepancies are discussed.

Keywords

SPICE; bipolar transistor switches; insulated gate bipolar transistors; power bipolar transistors; power semiconductor switches; semiconductor device measurement; semiconductor device models; semiconductor device testing; thermal analysis; -150 to 150 C; PSpice model; forward conduction drop; forward conduction voltage drop; switching characteristics; temperature effects; trench-gate IGBTs; turn-off; turn-on; Analytical models; Boundary conditions; Buffer layers; Computational modeling; Equations; Insulated gate bipolar transistors; Substrates; Temperature dependence; Temperature distribution; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 2001. Thirty-Sixth IAS Annual Meeting. Conference Record of the 2001 IEEE

Conference_Location

Chicago, IL, USA

ISSN

0197-2618

Print_ISBN

0-7803-7114-3

Type

conf

DOI

10.1109/IAS.2001.955794

Filename

955794