• DocumentCode
    1623939
  • Title

    WARP Speed IGBTs-switching at 100 to 150 kHz in power converter applications

  • Author

    Ambarian, Chris ; Chao, Chesley

  • Author_Institution
    Switch Strategic Marketing, Int.. Rectifier, El Segundo, CA, USA
  • fYear
    1997
  • Firstpage
    276
  • Lastpage
    280
  • Abstract
    International Rectifier´s latest development in IGBT technology has offered the power converter industry with optimized power switches-the WARP SpeedTM IGBTs. They have switching characteristics that are very close to those of power MOSFETs, without sacrificing the inherently superior conduction characteristics of IGBTs. Thus, in higher-power power supply type applications where power MOSFETs can become prohibitively expensive, the IGBT offers a more cost-effective solution
  • Keywords
    insulated gate bipolar transistors; power convertors; power semiconductor switches; 100 to 150 kHz; International Rectifier; WARP Speed IGBT; conduction; power converter; power supply; power switch; switching; Circuits; Costs; Frequency; Insulated gate bipolar transistors; MOSFETs; Power generation; Switches; Switching converters; Switching loss; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Wescon/97. Conference Proceedings
  • Conference_Location
    Santa Clara, CA
  • ISSN
    1095-791X
  • Print_ISBN
    0-7803-4303-4
  • Type

    conf

  • DOI
    10.1109/WESCON.1997.632349
  • Filename
    632349
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1623939