• DocumentCode
    1624008
  • Title

    Equilibrium to non-equilibrium carrier statistics for a nanolayer

  • Author

    Gupta, Chaitali ; Arora, Vijay K.

  • Author_Institution
    Dept. of Electr. Eng., Indian Inst. of Technol. Kanpur (IITK), Kanpur, India
  • fYear
    2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Fermi-Dirac carrier statistics for randomly oriented velocity moments is shown to transform to highly anisotropic non-equilibrium statistics yielding carrier velocity saturation comparable to 2-dimensional (2D) intrinsic velocity. The onset of quantum emission by a boson limits the saturation velocity. The ballistic nature of carriers injected from contacts in scaled-down channels is shown to degrade the mobility in agreement with experimental observations. Saturation velocity is shown to be independent of scattering parameters that control mobility.
  • Keywords
    S-parameters; ballistic transport; boson systems; carrier mobility; fermion systems; inhomogeneous media; nanostructured materials; quantum statistical mechanics; 2-dimensional intrinsic velocity; Fermi-Dirac carrier statistics; ballistic nature; boson limits; carrier velocity saturation; control mobility; equilibrium-nonequilibrium carrier statistics; highly anisotropic nonequilibrium statistics; injected carriers; mobility; nanolayer; quantum emission; randomly oriented velocity moments; scaled-down channels; scattering parameters; Nanoscale devices; Phonons; Photonics; ballistic transport; high-field transport; quantum emission; saturation velocity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Emerging Electronics (ICEE), 2012 International Conference on
  • Conference_Location
    Mumbai
  • Print_ISBN
    978-1-4673-3135-7
  • Type

    conf

  • DOI
    10.1109/ICEmElec.2012.6636240
  • Filename
    6636240