The effect of silicon avalanche diodes on fuse behaviour in LV power networks

Author

Beutel, A.A. ; Van Coller, J.M.

Author_Institution

Sch. of Electr. & Inf. Eng., Univ. of the Witwatersrand, South Africa

Volume

4

fYear

2001

Firstpage

2119

Abstract

The effect of silicon avalanche diodes (SADs) on the behaviour of fuses in low voltage (LV) power networks is shown, as well as the effect of the fuses on the energy dissipation in the SADs. In order to achieve this, an existing model developed for medium voltage fuses was adapted for LV fuses operating in the presence of SADs. A SAD model was also developed. Both models were validated by laboratory measurement. The effects of fault closing angle and fault level on SAD energy dissipation are shown, and a general method for determining the SAD energy rating for any given situation is derived.

Keywords

avalanche diodes; electric fuses; elemental semiconductors; power distribution protection; silicon; 230 V; 50 Hz; LV fuses; LV power networks; SAD energy dissipation; SAD energy rating; Si; energy dissipation; fault closing angle; fault level; fuse behaviour; laboratory measurement; medium voltage fuses; silicon avalanche diodes; Diodes; Energy dissipation; Fault currents; Fuses; Intelligent networks; Laboratories; Low voltage; Medium voltage; Silicon; Surges;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 2001. Thirty-Sixth IAS Annual Meeting. Conference Record of the 2001 IEEE

Conference_Location

Chicago, IL, USA

ISSN

0197-2618

Print_ISBN

0-7803-7114-3

Type

conf

DOI

10.1109/IAS.2001.955920

Filename

955920