Passivation of SiO2/SiC interface with La2O3 capped oxidation

Author

Munekiyo, S. ; Lei, Y.M. ; Natori, K. ; Iwai, Hisato ; Kawanago, T. ; Kakushima, K. ; Kataoka, Kotaro ; Nishiyama, A. ; Sugii, Nobuyuki ; Wakabayashi, H. ; Tsutsui, K. ; Furuhashi, Masayuki ; Miura, Naruhisa ; Yamakawa, Satoshi

Author_Institution

Frontier Res. Center, Tokyo Inst. of Technol., Yokohama, Japan

fYear

2014

fDate

13-15 Oct. 2014

Firstpage

114

Lastpage

116

Abstract

Thermal oxidation of SiC(0001) substrates with La₂O₃ capped annealing has been performed. La₂O₃ capped oxidation has shown improvements in reduced hysteresis and interface state density (Dit) for MOS capacitors. La-silicate grains, agglomerated at the step bunches of SiC substrates, have been confirmed upon oxidation. We can anticipated that La-silicate grains are likely to passivate the charge trapping at step bunches and effectively suppresses the Dit.

Keywords

MOS capacitors; annealing; interface states; lanthanum compounds; oxidation; passivation; silicon compounds; La-silicate grains; La₂O₃ capped oxidation; MOS capacitors; SiC; SiC(0001) substrates; SiO₂-SiC interface; SiO₂-SiC-La₂O₃; annealing; interface state density; passivation; thermal oxidation; Annealing; Hysteresis; Logic gates; MOS capacitors; Oxidation; Silicon carbide; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Wide Bandgap Power Devices and Applications (WiPDA), 2014 IEEE Workshop on

Conference_Location

Knoxville, TN

Type

conf

DOI

10.1109/WiPDA.2014.6964636

Filename

6964636