High power amplifiers for mobile communication systems

Author

Itoh, Yasushi

Author_Institution

Electro-Opt. & Microwave Syst. Lab., Mitsubishi Electr. Corp., Kanagawa, Japan

fYear

1995

Firstpage

45

Lastpage

48

Abstract

This paper introduces results of GaAs MESFET high power amplifier modules with low drain bias voltage for use in mobile communications systems. The design and fabrication techniques using HMIC and MMIC technologies are presented, addressing a design method of high power amplifier modules with the stringent requirements for cost, size, and performance. This paper describes three types of high power amplifier modules. UHF-band high efficiency, high power amplifier modules employing a combination of HMIC and MMIC technologies, a UHF-band high efficiency, linear amplifier module employing HMIC technologies, and a 1.9 GHz high efficiency, linear MMIC amplifier

Keywords

III-VI semiconductors; MESFET integrated circuits; MMIC power amplifiers; UHF power amplifiers; gallium arsenide; integrated circuit design; land mobile radio; multichip modules; power amplifiers; radio equipment; 1.9 GHz; GaAs; GaAs MESFET high power amplifier modules; HMIC; MMIC; UHF-band high efficiency; cost; design; fabrication techniques; high power amplifiers; linear MMIC amplifier; linear amplifier module; low drain bias voltage; mobile communication systems; performance; size; Circuits; FETs; High power amplifiers; Impedance matching; Impedance measurement; Low voltage; MMICs; Mobile communication; Power amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Signals, Systems, and Electronics, 1995. ISSSE '95, Proceedings., 1995 URSI International Symposium on

Conference_Location

San Francisco

Print_ISBN

0-7803-2516-8

Type

conf

DOI

10.1109/ISSSE.1995.497931

Filename

497931