Ultra-low-loss silicon based spot-size converter fabricated by CMOS compatible process

Author

Takei, Ryohei ; Suzuki, Masao ; Omoda, Emiko ; Manako, Shoko ; Kamei, Toshihiro ; Mori, Masahiko ; Sakakibara, Youichi

Author_Institution

Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan

fYear

2012

Firstpage

36

Lastpage

38

Abstract

An ultra-low-loss silicon based spot-size converter with an ultimate inverse-tapered waveguide was fabricated using a double-patterning photolithography technique. The measured mode conversion losses were 0.35±0.05 and 0.21±0.01 dB for the TE- and TM-like modes, respectively.

Keywords

CMOS integrated circuits; integrated optoelectronics; optical fabrication; optical losses; optical waveguides; optical wavelength conversion; photolithography; silicon-on-insulator; CMOS compatible process; Si; TE-like modes; TM-like modes; double-patterning photolithography; mode conversion losses; spot-size converter; ultimate inverse-tapered waveguide; ultralow-loss silicon; Couplings; Lithography; Optical fiber devices; Optical fibers; Silicon; Wires; double-patterning technique; inverse taper waveguide; photolithography; silicon photonics; spot-size converter;

fLanguage

English

Publisher

ieee

Conference_Titel

Group IV Photonics (GFP), 2012 IEEE 9th International Conference on

Conference_Location

San Diego, CA

ISSN

1949-2081

Print_ISBN

978-1-4577-0826-8

Type

conf

DOI

10.1109/GROUP4.2012.6324078

Filename

6324078