An alternative method to determine effective channel length and parasitic series resistance of LDD MOSFET´s

Author

Torres-Torres, Reydezel ; Murphy-Arteaga, Roberto

Author_Institution

Dept. of Electron., Nat. Inst. for Astrophys., Opt. & Electron., Puebla, Mexico

fYear

2002

fDate

6/24/1905 12:00:00 AM

Abstract

A new method to determine MOSFET effective channel length and parasitic source/drain series resistance is presented in this paper. Compared to previously reported methods, the one presented here allows the determination of these parameters simultaneously and as a function of gate voltage. The method is based on the iterative solution of a derived linear-region drain current relation. The method is validated with experimental data taken from submicron LDD MOSFETs, and compared with several previously published methods.

Keywords

MOSFET; doping profiles; electric current; electric resistance; iterative methods; semiconductor device measurement; semiconductor device models; LDD MOSFET; effective channel length; gate voltage; iterative solution; linear-region drain current relation; parasitic series resistance; parasitic source/drain series resistance; Astrophysics; Electrical resistance measurement; Equations; Equivalent circuits; Iterative methods; MOSFET circuits; Semiconductor process modeling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems, 2002. Proceedings of the Fourth IEEE International Caracas Conference on

Print_ISBN

0-7803-7380-4

Type

conf

DOI

10.1109/ICCDCS.2002.1004025

Filename

1004025