DocumentCode
1626035
Title
Macro-modeling for MOS device simulation
Author
Rodrigo-Rodriguez, T. ; Gutiérrez-D, Edmundo A. ; Arturo-Sarmiento, R. ; Selberherr, Siegfried
Author_Institution
Inst. fur Microelectron., Technische Univ. Wien, Austria
fYear
2002
fDate
6/24/1905 12:00:00 AM
Abstract
By making use of the MOS diode theory, the carrier, and current distribution, as well as the mobility in a MOS device is evaluated. Simple analytical expressions are used for parameters like mobility, carrier concentration, and transversal electric field. Agreement between experimental and simulated results from an LDD MOSFET and an n-well resistance is in agreement, probing this approach is suitable as a plug-in model tester for quick model evaluation.
Keywords
MIS devices; MOSFET; carrier density; carrier mobility; semiconductor device models; LDD MOSFET; MOS device simulation; MOS diode theory; carrier concentration; carrier distribution; carrier mobility; current distribution; macro-model; n-well resistance; plug-in model tester; transversal electric field; Circuit simulation; Conductivity; Electrons; MOS devices; MOSFETs; Mathematical model; Nanoscale devices; Resistors; Surface resistance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Devices, Circuits and Systems, 2002. Proceedings of the Fourth IEEE International Caracas Conference on
Print_ISBN
0-7803-7380-4
Type
conf
DOI
10.1109/ICCDCS.2002.1004026
Filename
1004026
Link To Document