• DocumentCode
    1626041
  • Title

    Charging and discharging studies in microwave capacitive switches under high field pulse discharges

  • Author

    Ruan, J. Jinyu ; Papaioannou, George ; Nolhier, Nicolas ; Trémouilles, David ; Coccetti, Fabio ; Plana, Robert

  • Author_Institution
    LAAS, CNRS, Toulouse, France
  • fYear
    2010
  • Firstpage
    140
  • Lastpage
    143
  • Abstract
    This paper investigates the impact of pulse induced charging on RF-MEMS capacitive switches. The main goal here is to better understand the charging and discharging process involved in high field discharges. This is a necessary study for the reason that the reliability of the structure is directly affected by the underlying charging/discharging processes. Electrostatic discharge (ESD) experiments were carried out using a transmission-line-pulsing technique and compared with a human-body-model testing method. The tests were done on a test-vehicle design of a W-band capacitive RF-MEMS switch. Base on capacitance vs. voltage measurements we highlight the importance of the dielectric material properties and its impact on the device immunity with respect to pulse induced failure mechanisms.
  • Keywords
    electrostatic discharge; microswitches; semiconductor device reliability; RF-MEMS capacitive switches; W-band capacitive RF-MEMS switch; capacitance measurement; device immunity; dielectric material properties; discharging; electrostatic discharge; high field pulse discharges; microelectromechanical system; microwave capacitive switches; pulse induced charging; pulse induced failure mechanism; radio frequency; reliability; test vehicle design; transmission line pulsing; voltage measurement; Capacitance; Dielectric materials; Electrostatic discharge; Failure analysis; Mechanical factors; Pulse measurements; Radiofrequency microelectromechanical systems; Switches; Testing; Voltage measurement; Capacitive RF-MEMS; Charging; Electrostatic Discharge Pulse; Reliability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 Topical Meeting on
  • Conference_Location
    New Orleans, LA
  • Print_ISBN
    978-1-4244-5456-3
  • Type

    conf

  • DOI
    10.1109/SMIC.2010.5422844
  • Filename
    5422844