• DocumentCode
    1626291
  • Title

    New phenomena for the Lifetime Prediction of TANOS-based Charge Trap NAND Flash Memory

  • Author

    Kim, Juhyung ; Kang, Changseok ; Chang, Sung-II ; Kim, Jongyeon ; Jeong, Y. Ounseok ; Park, Chan ; Kang, Joo-Heon ; Kim, Sang-Hoon ; Hwang, Sunkyu ; Choe, Byeong-In ; Park, Jintaek ; Chung, Juhyuck ; Park, Youngwoo ; Choi, Jungdal ; Chung, Chilhee

  • Author_Institution
    Semicond. R&D Center, Samsung Electron. Co., Ltd., Hwasung, South Korea
  • fYear
    2010
  • Firstpage
    99
  • Lastpage
    100
  • Abstract
    In this paper, the data retention characteristics of the charge trap flash (CTF) memory are evaluated and new findings to predict its lifetime more accurately are reported. In addition, the unique charge loss behavior of CTF memory cell is explained in terms of charge loss paths.
  • Keywords
    NAND circuits; flash memories; CTF memory cell; TANOS-based charge trap NAND flash memory; charge loss paths; data retention characteristics; lifetime prediction phenomena; Variable speed drives;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2010
  • Conference_Location
    South Bend, IN
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4244-6562-0
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2010.5551854
  • Filename
    5551854
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1626291