Dots-in-a-well ingaas based laser probed by photoreflectance-anisotropy spectroscopy

Author

González-Fernández, J.V. ; Balderas-Navarro, R.E. ; Lara-Velázquez, I. ; Ortega-Gallegos, J. ; De León-Zapata, R. Díaz ; Lastras-Martínez, L.F. ; Lastras-Martínez, A.

Author_Institution

Inst. de Investig. en Comun. Opt., Univ. Autonoma de San Luis Potosi, San Luis Potosi, Mexico

fYear

2009

Firstpage

8

Lastpage

12

Abstract

We have used photoreflectance-anisotropy (PRA) spectroscopy as an optical probe for the characterization of heterostructure lasers with an active region consisting of InAs quantum dots (QDs) embedded in a series of three stacked In_0.15Ga_0.85As quantum wells (QWs). By probing the in-plane optical anisotropy, we demonstrate that PRA spectroscopy has the ability to detect and differentiate layers with quantum dimensions, as the anisotropy PRA signal stems from QWs and QDs. We show that PRA spectroscopy can be an attractive tool for the characterization of buried interfaces in nanostructured devices at room temperature.

Keywords

III-V semiconductors; anisotropic media; indium compounds; photoreflectance; quantum dot lasers; quantum well lasers; spectroscopy; InAs; InGaAs; buried interface; dots-in-a-well based laser; heterostructure laser characterization; in-plane optical anisotropy; nanostructured device; optical probe; photoreflectance-anisotropy spectroscopy; temperature 293 K to 298 K; Anisotropic magnetoresistance; Geometrical optics; Indium gallium arsenide; Laser theory; Optical modulation; Optical polarization; Optical sensors; Probes; Spectroscopy; Surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

University of Guanajuato IEEE Students Chapter (IEEExPO), 2009 III Conference of

Conference_Location

Salamanca, Guanajuato

Print_ISBN

978-1-4244-6027-4

Type

conf

DOI

10.1109/IEEEXPO.2009.5422872

Filename

5422872