Fabrication and characteristics of high speed implant-confined, index-guided, lateral-current, 850 nm vertical cavity surface emitting lasers

Author

Dang, G.T. ; Mehandru, R. ; Luo, B. ; Ren, F. ; Hobson, W.S. ; Lopata, J. ; Tayahi, M. ; Chu, S.N.G. ; Pearton, S.J. ; Chang, W. ; Shen, H.

Author_Institution

Dept. of Chem. Eng., Florida Univ., Gainesville, FL, USA

fYear

2002

fDate

6/24/1905 12:00:00 AM

Abstract

Process technology of high-speed implant-apertured, index-guide, lateral-current-injection, dielectric-mirror GaAs quantum well vertical cavity surface emitting lasers has been developed. Oxygen and helium implantation for aperture definition and extrinsic capacitance reduction, dielectric mirror formation, p- and n-ohmic contact formation, were investigated. GaAs/AlGaAs based 850 nm VCSELs with small signal modulation bandwidths up to 11.5 Gb/s and an eye diagram generated at 12 Gb/s by a pseudorandom bit sequence (PRBS) of 231-1 were achieved. The with bit-error rates were below 10-13. The threshold current is as low as 0.8 mA for 7 mm diameter current apertures and typical slope efficiencies of 0.45-0.5 mA/mW are obtained for output mirror reflectivity of 99.5%.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; ion implantation; laser mirrors; ohmic contacts; quantum well lasers; surface emitting lasers; 0.8 mA; 11.5 Gbit/s; 12 Gbit/s; 7 mm; 850 nm; GaAs-AlGaAs; GaAs/AlGaAs quantum well vertical cavity surface emitting laser; aperture definition; bit error rate; dielectric mirror; extrinsic capacitance; eye diagram; fabrication process technology; helium implantation; high-speed implant confinement; index guiding; lateral current injection; ohmic contact formation; oxygen implantation; pseudorandom bit sequence; reflectivity; slope efficiency; small-signal modulation bandwidth; threshold current; Apertures; Dielectrics; Gallium arsenide; Helium; Mirrors; Optical device fabrication; Oxygen; Quantum well lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems, 2002. Proceedings of the Fourth IEEE International Caracas Conference on

Print_ISBN

0-7803-7380-4

Type

conf

DOI

10.1109/ICCDCS.2002.1004048

Filename

1004048