DocumentCode
1626626
Title
Amorphous InGaZnO logic gates for transparent electronics
Author
Luo, Haojun ; Wellenius, Patrick ; Lunardi, Leda ; Muth, John F.
Author_Institution
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
fYear
2010
Firstpage
121
Lastpage
122
Abstract
In this paper we present, transparent logic showing good performance from inverters, NAND and NOR gates, all deposited at room temperature. The significance of these results is that construction of these basic digital logic building blocks with high gain and fast response demonstrate the viability for amorphous oxide digital logic to be utilized in transparent, and flexible electronic systems.
Keywords
amorphous semiconductors; flexible electronics; gallium compounds; indium compounds; invertors; logic gates; zinc compounds; InGaZnO; NAND gate; NOR gates; amorphous InGaZnO logic gates; amorphous oxide digital logic; flexible electronic systems; inverters; temperature 293 K to 298 K; transparent electronics; Geometry; Indium tin oxide; Inverters; Logic gates; Performance evaluation; Ring oscillators; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference (DRC), 2010
Conference_Location
South Bend, IN
ISSN
1548-3770
Print_ISBN
978-1-4244-6562-0
Electronic_ISBN
1548-3770
Type
conf
DOI
10.1109/DRC.2010.5551866
Filename
5551866
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