Heterojunction bipolar phototransistors for analog microwave photonic systems

Author

Paolella, A. ; De Barros, L.E.M. ; Herczfeld, P. ; Enquist, P. ; Van Meerbreke, W.

Author_Institution

Army Res. Lab. PSD, Fort Monmouth, NJ, USA

fYear

1995

Firstpage

351

Lastpage

354

Abstract

The Heterojunction Bipolar Transistor (HBT) commonly used in GaAs MMICs for microwave and millimeter wave systems can perform as a high speed photodetector with inherent gain and high linearity. The use of the phototransistor will allow circuit designers to develop a new class of photonic/millimeter wave circuits. A new model for the HBT has been developed which solves for the electrical and photogenerated currents. Experimental and theoretical curves relating to the device behavior are presented and compared

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; millimetre wave bipolar transistors; photodetectors; phototransistors; GaAs; analog microwave photonic systems; device behavior; gain; heterojunction bipolar phototransistors; high speed photodetector; linearity; photogenerated currents; photonic/millimeter wave circuits; Equations; Gallium arsenide; Heterojunction bipolar transistors; Linearity; MESFETs; Nonlinear optics; Optical receivers; Optical saturation; Phototransistors; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Signals, Systems, and Electronics, 1995. ISSSE '95, Proceedings., 1995 URSI International Symposium on

Conference_Location

San Francisco

Print_ISBN

0-7803-2516-8

Type

conf

DOI

10.1109/ISSSE.1995.498006

Filename

498006