DocumentCode
1628142
Title
Modeling demands for nanoscale devices
Author
Pourfath, M. ; Sverdlov, V. ; Selberherr, S.
Author_Institution
Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
fYear
2010
Firstpage
211
Lastpage
214
Abstract
With the progress of miniaturization the size of electronic devices is presently scaling down into the nanometer region, where quantum mechanical effects play an important role. Appropriate technology computer-aided design tools are essential to explore the physics of nanoscale devices and to find methods to optimize their functionality and performance. In this work we review the approaches to quantum mechanical modeling of carrier transport in nanoscale electronic devices. Numerical analyses for graphene nanoribbons are presented as a case study.
Keywords
circuit CAD; graphene; nanoelectronics; carrier transport; graphene nanoribbons; nanoscale electronic devices; quantum mechanical effects; technology computer-aided design tools; Boltzmann equation; Green´s function methods; Mathematical model; Nanoscale devices; Quantum mechanics; Scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference (DRC), 2010
Conference_Location
South Bend, IN
ISSN
1548-3770
Print_ISBN
978-1-4244-6562-0
Electronic_ISBN
1548-3770
Type
conf
DOI
10.1109/DRC.2010.5551915
Filename
5551915
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