• DocumentCode
    1628142
  • Title

    Modeling demands for nanoscale devices

  • Author

    Pourfath, M. ; Sverdlov, V. ; Selberherr, S.

  • Author_Institution
    Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
  • fYear
    2010
  • Firstpage
    211
  • Lastpage
    214
  • Abstract
    With the progress of miniaturization the size of electronic devices is presently scaling down into the nanometer region, where quantum mechanical effects play an important role. Appropriate technology computer-aided design tools are essential to explore the physics of nanoscale devices and to find methods to optimize their functionality and performance. In this work we review the approaches to quantum mechanical modeling of carrier transport in nanoscale electronic devices. Numerical analyses for graphene nanoribbons are presented as a case study.
  • Keywords
    circuit CAD; graphene; nanoelectronics; carrier transport; graphene nanoribbons; nanoscale electronic devices; quantum mechanical effects; technology computer-aided design tools; Boltzmann equation; Green´s function methods; Mathematical model; Nanoscale devices; Quantum mechanics; Scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2010
  • Conference_Location
    South Bend, IN
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4244-6562-0
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2010.5551915
  • Filename
    5551915