Modeling the drain current of the dual-gate GaAs MESFET

Author

Ibrahim, M. ; Syrett, B. ; Bennett, J.

Author_Institution

Carleton Univ., Ottawa, Ont., Canada

Volume

3

fYear

2003

Firstpage

2113

Abstract

A new empirical model of the dual-gate GaAs MESFET (DGFET) drain current is presented. The model uses a modified expression of the well-established hyperbolic tangent-function to accurately fit the DC and the RF I/V characteristics of the DGFET. The frequency dispersion of the DGFET transconductances and output conductance is taken into account in the new model. The new model is tested on many devices of different topologies. Very good agreement between the measured and the calculated I/V characteristics over a wide range of bias conditions is achieved.

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; hyperbolic equations; semiconductor device measurement; semiconductor device models; DC/RF I/V characteristics fitting; DGFET empirical models; DGFET transconductance frequency dispersion; FET bias conditions/topology; GaAs; dual-gate GaAs MESFET drain current modeling; hyperbolic tangent-functions; Electric breakdown; FETs; Gallium arsenide; MESFETs; Nonlinear equations; Power generation; Radio frequency; Testing; Topology; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2003 IEEE MTT-S International

Conference_Location

Philadelphia, PA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7695-1

Type

conf

DOI

10.1109/MWSYM.2003.1210579

Filename

1210579