DocumentCode
1628172
Title
A scalable model for silicon spiral inductors
Author
Scuderi, A. ; Biondi, T. ; Ragonese, E. ; Palmisano, G.
Author_Institution
Facolta di Ingegneria, Catania Univ., Italy
Volume
3
fYear
2003
Firstpage
2117
Abstract
A simple model for monolithic spiral inductors on silicon substrates is presented. Each lumped element of the model is related to the layout geometry by analytical equations. Moreover, a novel equation for series resistance is also proposed. The model was validated by comparisons with on-wafer measurements over a wide range of geometrical layout parameters.
Keywords
Q-factor; electronic engineering computing; inductors; lumped parameter networks; Q factor; Si; integrated inductors; layout geometry related lumped element models; monolithic spiral inductors; scalable silicon substrate spiral inductor models; series resistance equations; Electrical resistance measurement; Equations; Frequency estimation; Geometry; Immune system; Inductors; Q factor; Silicon; Solid modeling; Spirals;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location
Philadelphia, PA, USA
ISSN
0149-645X
Print_ISBN
0-7803-7695-1
Type
conf
DOI
10.1109/MWSYM.2003.1210580
Filename
1210580
Link To Document