• DocumentCode
    1628277
  • Title

    Effects of edge chemistry doping on graphene nanoribbon mobility

  • Author

    Ouyang, Y. ; Sanvito, S. ; Guo, J.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL, USA
  • fYear
    2010
  • Firstpage
    217
  • Lastpage
    218
  • Abstract
    We have presented a simulation study of the edge-doping-limited mobility. The edge chemistry of different dopant species is captured by calibrating TB Hamiltonian to the ab-initio simulations. Due to the nature of quasi-1D channel, electronic transport can be significantly degraded by edge chemistry doping especially at a small channel width. A Careful control of doping process (e.g. doping density less than 5% or a complete edge doping that substitutes all edge C atoms or H atoms) is important to reduce the adverse effects on mobility.
  • Keywords
    graphene; nanotechnology; semiconductor doping; TB Hamiltonian; edge chemistry doping; edge-doping-limited mobility; electronic transport; graphene nanoribbon mobility; quasi-1D channel; Charge carrier density; Charge carrier processes; Chemistry; Doping; Nitrogen; Photonic band gap; Semiconductor process modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2010
  • Conference_Location
    South Bend, IN
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4244-6562-0
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2010.5551920
  • Filename
    5551920