DocumentCode
1628279
Title
MuGFETs for microwave and millimeter wave applications
Author
Tinoco, J.C. ; Raskin, J. -P ; Cerdeira, A. ; Estrada, M.
Author_Institution
Dept. de Ing. en Telecomun., F-I UNAM, Mexico City, Mexico
fYear
2010
Firstpage
615
Lastpage
618
Abstract
In the last years the MOS transistor technology has reach very high cut-off frequencies (near to 500 GHz), thanks to the continuous reduction of the channel length, but the short-channel-effects (SCE) strongly affects the MOSFET behavior below 60 nm. For such technology nodes the Multiple-Gate transistor (MuGFET) appears as a promising alternative to continue with the International Technology Roadmap of Semicoductors (ITRS) projections. In this paper, limitations and possible improvements of MuGFETs are presented.
Keywords
MOSFET; microwave transistors; millimetre wave transistors; MOS transistor technology; MuGFET; channel length; multiple-gate transistor; short channel effects; Capacitance; Cutoff frequency; FinFETs; Limiting; Logic gates; MOSFET circuits; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4244-5797-7
Type
conf
DOI
10.1109/ICSICT.2010.5667308
Filename
5667308
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