Progress in the growth, characterization and device performance for nonpolar and semipolar GaN-based materials

Summary form only given. Devices grown on c-plane GaN suffer from large internal electric fields due to discontinuities in spontaneous and piezoelectric polarization effects which cause charge separation between holes and electrons in quantum wells and limits the radiative recombination efficiency. Nonpolar GaN devices, such as in the m-plane (1100), are free from polarization related electric fields since the polar c-axis is parallel to any heterointerfaces. Semipolar GaN-based devices have reduced electric fields and in some cases, such as (1122), show a high propensity for Indium update for InGaN quantum wells. In this talk, we present work on outstanding materials issues including: morphological stability with special emphasis on the role of substrate orientation and growth conditions; new evidence for dislocation-related strain relaxation in semipolar GaN-based heterostructures; unambiguous determination of the polarization cross-over in semipolar InGaN/GaN heterostructures; new detailed atom probe analysis of high performance GaN-based LEDs and laser diodes. Additionally, we update progress on nonpolar electron devices and nonpolar and semipolar LEDs and LDs.