• DocumentCode
    1628455
  • Title

    Vertertical integration of silicon nitride on siliconon-insulator platform

  • Author

    Li, Qing ; Eftekhar, Ali A. ; Sodagar, Majid ; Atabaki, Amir H. ; Adibi, Ali

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
  • fYear
    2012
  • Firstpage
    303
  • Lastpage
    304
  • Abstract
    We propose to integrate silicon nitride on silicon-on-insulator platform for devices which require low insertion loss and high power handling capability. Preliminary results including silicon nitride growth, high-Q resonator fabrication, and vertical integration are presented.
  • Keywords
    integrated optics; optical losses; silicon compounds; silicon-on-insulator; wide band gap semiconductors; SiN; Absorption; Annealing; Microcavities; Optical waveguides; Silicon; Silicon compounds; silicon nitride; silicon-on-insulator; vertical;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2012 IEEE 9th International Conference on
  • Conference_Location
    San Diego, CA
  • ISSN
    1949-2081
  • Print_ISBN
    978-1-4577-0826-8
  • Type

    conf

  • DOI
    10.1109/GROUP4.2012.6324167
  • Filename
    6324167
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1628455