• DocumentCode
    1629021
  • Title

    Transport modeling for nanoscale semiconductor devices

  • Author

    Pourfath, M. ; Sverdlov, V. ; Selberherr, S.

  • Author_Institution
    Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
  • fYear
    2010
  • Firstpage
    1737
  • Lastpage
    1740
  • Abstract
    Due to extreme miniaturization of device dimensions the well established TCAD tools are pushed to the limits of their applicability. Since conventional MOSFETs are already operating in the sub-100 nm range, new physical effects and principles begin to determine the transport characteristics and the validity of conventional current transport models is in question. The classical drift-diffusion model of carrier transport in electronic devices has been widely employed in TCAD tools. However, it must be generalized to include hot-carrier effects. This motivated the development of higher-order moments transport models such as the hydrodynamic transport model, the energy transport model, and the six-moments model. With scaling continuing quantum mechanical effects begin to affect the transport properties. Parallel to the search for new technological solutions for MOSFET scaling, the development of conceptually new devices and architectures is becoming increasingly important. New nanoelectronic structures, such as carbon nanotubes, nanowires, and even molecules, are considered to be prominent candidates for the post-CMOS era. At this small device size the geometrical spread of the carrier wave packet in transport direction can no longer be ignored. When the device size becomes shorter than the coherence length, the complete information about the carrier dynamics inside the device including the phase of the wave function is needed and one has to resort to a full quantum mechanical description including scattering. Transport in advanced nanodevices is determined by the interplay between coherent propagation and scattering. Numerical methods for dissipative quantum transport based on the non-equilibrium Green´s function formalism, the Liouville/von-Neumann equation for the density matrix, and the kinetic equation for the Wigner function are attaining relevance. In this work we review semi-classical and quantum mechanical modeling of carrier transport in nanoscale semiconduct- - or devices.
  • Keywords
    carrier mobility; hot carriers; nanotechnology; quantum theory; semiconductor device models; carrier transport; drift diffusion model; hot carrier effect; nanoscale semiconductor devices; quantum mechanical modeling; semiclassical modeling; transport model; Boltzmann equation; Mathematical model; Monte Carlo methods; Quantum mechanics; Silicon; Strain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-5797-7
  • Type

    conf

  • DOI
    10.1109/ICSICT.2010.5667336
  • Filename
    5667336